maximum ratings and electrical characteristics for capacitive load, derate current by 20%. single phase, half wave, 60hz, resistive or inductive load. rating at 25 o c ambient temperature unless otherwise specified. notes : -55 to +150 symbol v rrm v rms v dc if (av) i fsm v f i r trr c j t j , t stg 50 100 200 140 200 300 210 300 600 35 70 420 50 100 600 20.0 10.0 200 175 0.975 1.3 1.5 35 250 120 70 unit v v v v a a ua ua o c pf ns 400 280 400 maximum recurrent peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward rectified peak forward surge current, 8.3ms single maximum instantaneous forward voltage maximum dc reverse current @t j =25 o c typical junction capacitance (note 2) operating junction and storage current t c =125 o c half sine-wave superimposed on rated load (jedec method) @ 10.0 a at rated dc blocking voltage @t j =125 o c maximum reverse recovery time (note 1) features ? l o w forward voltage drop ? fast switching for high efficiency ? high current capability ? case: to-220ab heatsink ? high surge current capability ? weight: 2.24 gram approximately ? polarity: as marked on body method 208 ? mounting position: any ? terminals: solderable per mil-std-202 mechanical data ? low reverse leakage current temperature range (1) reverse recovery test conditions i f = 0.5a, i r = 1.0a, irr = 0.25a. (2) measured at 1.0 mhz and applied reverse voltage of 4.0 volts dc. ? epoxy: ul 94v-0 rate flame retardant .196(5.00) .054(1.39) .038(0.96) .419(10.66) .139(3.55) min .624(15.87) .269(6.85) .548(13.93) .50(12.7)min .177(4.5)max .226(5.75) .163(4.16) .045(1.15) .019(0.50) .025(0.65)max .1(2.54) .1(2.54) .387(9.85) to-220ab unit : inch (mm) ? sf2001g thru sf2008g pb free plating product sf2001g thru sf2008g 20.0 ampere dual unipolar-doubler polarity superfast recovery diode pb ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/2 positive negative doubler common cathode case case case common anode series connection suffix "a" suffix "d" "a" common anode suffix "d" anode and cathode coexistence suffix common cathode sf2001g sf2001ga sf2001gd sf2002g sf2002ga sf2002gd sf2004g sf2004ga SF2004GD sf2005g sf2005ga sf2005gd sf2006g sf2006ga sf2006gd sf2008g sf2008ga sf2008gd free datasheet http:///
f i g . 1 - f o r w a r d c u r r e n t d e r a t i n g c u r v e f i g . 3 - t y p i c a l i n s t a n t a n e o u s f o r w a r d c h a r a c t e r i s t i c s a v e r a g e f o r w a r d r e c t i f i e d c u r r e n t , a m p e r e s 2 0 8 6 4 1 0 1 6 i i n s t a n t a n e o u s f o r w a r d c u r r e n t , a m p e r e s 0 . 1 10 15 0 . 0 1 0 . 4 0 . 2 0 . 6 0 . 8 1 . 0 1 . 2 1 . 4 1 . 6 0 0 5 0 1 0 0 1 5 0 c a s e t e m p e r a t u r e , o c i n s t a n t a n e o u s f o r w a r d v o l t a g e , v o l t s f i g . 2 - m a x i m u m n o n - r e p e t i t i v e p e a k f o r w a r d s u r g e c u r r e n t p e a k f o r w a r d s u r g e c u r r e n t , a m p e r e s n u m b e r o f c y c l e s a t 6 0 h z 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 2 0 0 1 1 0 1 0 0 f i g . 4 - t y p i c a l r e v e r s e c h a r a c t e r i s t i c s p e r c e n t o f r a t e d p e a k r e v e r s e v o l t a g e , % i n s t a n t a n e o u s r e v e r s e c u r r e n t , m i c r o a m p e r e s 0 . 1 0 1 1 0 1 0 0 0 1 0 0 2 0 4 0 6 0 8 0 1 0 0 f i g . 5 - t y p i c a l j u n c t i o n c a p a c i t a n c e r e v e r s e v o l t a g e , v o l t s 0 . 1 1 0 j u n c t i o n c a p a c i t a n c e , p f 1 0 0 0 1 . 0 4 . 0 1 0 1 0 0 1 0 0 6 0 h z r e s i s t i v e o r i n d u c t i v e l o a d p u l s e w i d t h 8 . 3 m s s i n g l e h a l f - s i r e - w a v e ( j e d e c m e t h o d ) t j = 2 5 o c p u l s e w i d t h = 3 0 0 u s 1 % d u t y c y c l e t j = 1 2 5 o c t j = 2 5 o c t j = 2 5 o c f = 1 . 0 m h z v s i g = 5 0 m v p - p ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/2 ? sf2001g thru sf2008g sf2001g-sf2004g sf2005g-sf2007g sf2008g sf2001g-sf2004g sf2005g-sf2008g free datasheet http:///
|
